Low?Voltage and High Thermal Stability Single?Element Te Selector with Failed Bit Pruning Operation Enabling Robust Cross?Point Memory

نویسندگان

چکیده

The breakdown (BD) of one-selector-one-resistor memory cells incurs increasing crosstalk and power consumption in the cross-point array. In this work, failed bit pruning (FBP) operation selectors is presented to cope with side effects due BD cells. First, FBP concept its requirements on device parameters presented. Then wide existence demonstrated by investigating five different materials. Among them, single-element (Te) selector highlighted. It not only shows high resistance after prune (>50 M?) under a low voltage (2 V) but also achieves threshold (1.3 thermal stability (430 °C). This work demonstrates new universal character for devices enable robust high-density memory.

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ژورنال

عنوان ژورنال: Advanced electronic materials

سال: 2022

ISSN: ['2199-160X']

DOI: https://doi.org/10.1002/aelm.202200870